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HMC469MS8G的技术资料

来源:东莞市盈鑫光电有限公司; (2009/4/21 20:02:04)
HMC469MS8G的产品特征:
·+18 dBm P1dB Output Power
·15 dB Gain
·Output IP3: +34 dBm
·Supply (Vs): +5V to +12V
·14.9 mm2 Ultra Small 8 Lead MSOP


以上信息由『维库电子开发网』(www.weeqoo.com)整理。

HMC469MS8G的技术参数:
Collector Bias Voltage (Vcc) +6.0 Vdc
Collector Bias Current (Icc) 100 mA
RF Input Power (RFin)(Vcc = +4.2 Vdc) +17 dBm
Junction Temperature 150 ℃
Continuous Pdiss (T = 85 ℃)
(derate 29.58 mW/℃ above 85 ℃)
1.92 W
Thermal Resistance
(junction to ground paddle)
33.8 ℃/W
Storage Temperature -65 to +150 ℃
Operating Temperature -40 to +85 ℃


资料整理:维库电子开发网(www.weeqoo.com),的芯片PDF资料基地。

HMC469MS8G的产品描述:
The HMC469MS8G is a SiGe HBT Dual Channel Gain Block MMIC SMT amplifi er covering DC to 5 GHz. This versatile product contains two gain blocks, packaged in a single 8 lead plastic MSOP, for use as either separate cascadable 50 Ohm RF/IF gain stages, LO or PA drivers or with both amplifi ers combined utilizing external 90° hybrids to create a high linearity driver amplifi er. Each amplifi er in the HMC469MS8G offers 15 dB of gain, +18dBm P1dB with a +34 dBm output IP3 at 850 MHz while requiring only 75 mA from a single positive supply. The combined dual amplifi er circuit delivers up to +20 dBm P1dB with +35dBm OIP3 for specific application bands through 4 GHz.

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