HMC471MS8G的技术资料
·+20 dBm P1dB Output Power
·20 dB Gain
·Output IP3: +34 dBm
·Supply (Vs): +6V to +12V
·14.9 mm2 Ultra Small 8 Lead MSOP
以上信息由『维库电子开发网』（www.weeqoo.com）整理。
HMC471MS8G的技术参数：
| Collector Bias Voltage (Vcc) | +6.0 Vdc |
| Collector Bias Current (Icc) | 100 mA |
| RF Input Power (RFin)(Vcc = +4.2 Vdc) | +17 dBm |
| Junction Temperature | 150 ℃ |
|
Continuous Pdiss (T = 85 ℃) |
2.12 W |
| Thermal Resistance (junction to ground paddle) |
30.7 ℃/W |
| Storage Temperature | -65 to +150 ℃ |
| Operating Temperature | -40 to +85 ℃ |
资料整理：维库电子开发网（www.weeqoo.com），的芯片PDF资料基地。
HMC471MS8G的产品描述：
The HMC471MS8G is a SiGe HBT Dual Channel Gain Block MMIC SMT amplifi er covering DC to 5 GHz. This versatile product contains two gain blocks, packaged in a single 8 lead plastic MSOP, for use as either separate cascadable 50 Ohm RF/IF gain stages, LO or PA drivers or with both amplifi ers combined utilizing external 90° hybrids to create a high linearity driver amplifi er. Each amplifi er in the HMC471MS8G offers 20 dB of gain, +20dBm P1dB with a +34 dBm output IP3 at 850 MHz while requiring only 80 mA from a single positive supply. The combined dual amplifi er circuit delivers up to +21 dBm P1dB with +36dBm OIP3 for specific application bands through 4 GHz.
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