HMC476MP86的技术资料
.P1dB Output Power: +12 dBm
.Gain: 20 dB
.Output IP3: +25 dBm
.Cascadable 50 Ohm I/Os
.Single Supply: +5V to +12V
HMC476MP86的技术参数:
Collector Bias Voltage (Vcc) |
+6.0 Vdc |
Collector Bias Current (Icc) |
45 mA |
RF Input Power (RFin)(Vcc = +3.0 Vdc) |
+18 dBm |
Junction Temperature |
150 °C |
Continuous Pdiss (T = 85 °C) |
0.504 W |
Thermal Resistance |
129 °C/W |
Storage Temperature |
-65 to +150 °C |
Operating Temperature |
-40 to +85 °C |
HMC476MP86的产品描述:
The HMC476MP86 is a SiGe Heterojunction Bipolar Transistor (HBT) Gain Block MMIC SMT amplifi er covering DC to 6 GHz. This Micro-P packaged amplifi er can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +13 dBm output power. The HMC476MP86 offers 20 dB of gain with a +25 dBm output IP3 at 850 MHz while requiring only 35 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.
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