东莞市妙奇电子科技有限公司

设为首页 | 发送留言

您现在所在位置: 首页 > 技术资料 > HMC476MP86的技术资料

HMC476MP86的技术资料

来源:东莞市盈鑫光电有限公司; (2009/4/21 20:02:04)
HMC476MP86的产品特征:
.P1dB Output Power: +12 dBm
.Gain: 20 dB
.Output IP3: +25 dBm
.Cascadable 50 Ohm I/Os
.Single Supply: +5V to +12V


HMC476MP86的技术参数:

Collector Bias Voltage (Vcc)

+6.0 Vdc

Collector Bias Current (Icc)

45 mA

RF Input Power (RFin)(Vcc = +3.0 Vdc)

+18 dBm

Junction Temperature

150 °C

Continuous Pdiss (T = 85 °C)
(derate 7.75 mW/°C above 85 °C)

0.504 W

Thermal Resistance
(junction to lead)

129 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C



HMC476MP86的产品描述:

The HMC476MP86 is a SiGe Heterojunction Bipolar  Transistor (HBT) Gain Block MMIC SMT amplifi er  covering DC to 6 GHz. This Micro-P packaged amplifi er can be used as a cascadable 50 Ohm RF/IF gain stage as well as a LO or PA driver with up to +13 dBm output power. The HMC476MP86 offers 20 dB of gain with a +25 dBm output IP3 at 850 MHz while requiring only 35 mA from a single positive supply. The Darlington feedback pair used results in reduced sensitivity to normal process variations and excellent gain stability over temperature while requiring a minimal number of external bias components.

相关新闻

HMN1288D的技术资料...

HMN1288D的产品特征:· Access time : 70, 85, 120, 150 ns· High-density design : 1Mbit Design·...

IDT707278L的技术资料...

IDT707278L的产品特征:● 32K x 16 Bank-Switchable Dual-Ported SRAM Architecture – Four independent 8K...

HMC468LP3的技术资料...

HMC468LP3的产品特征:·1 dB LSB Steps to 7 dB·High IP3: +50 dBm·+/- 0.25 dB Typical Bit Erro...

HMC469MS8G的技术资料...

HMC469MS8G的产品特征:·+18 dBm P1dB Output Power·15 dB Gain·Output IP3: +34 dBm·Supply...

HMC471MS8G的技术资料...

HMC471MS8G的产品特征:·+20 dBm P1dB Output Power·20 dB Gain·Output IP3: +34 dBm·Supply...

联系我们

  • 地址:广东省东莞市东城区下桥新维路22号富民工业园4楼
  • 电话:0769-27285569//13929428009
  • 手机:13929428009
  • Mail:13929428009@163.com
  • QQ:企业QQ:814151960