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HMC506LP4的技术资料

来源:东莞市盈鑫光电有限公司; (2009/4/21 20:02:04)
HMC506LP4的产品特征:
.Pout: +14 dBm
.Phase Noise: -103 dBc/Hz @100 KHz
.No External Resonator Needed
.Single Supply: +3V @ 77 mA
.QFN Leadless SMT Package, 16 mm2


HMC506LP4的技术参数:

Vcc

+3.5 Vdc

Vtune

0 to +11V

Channel Temperature

135 °C

Continuous Pdiss (T = 85°C)
(derate 6.07 mW/°C above 85°C)

303 mW

Thermal Resistance
(junction to ground paddle)

165 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C



HMC506LP4的产品描述:

The HMC506LP4 is a GaAs InGaP Heterojunction Bipolar Transistor (HBT) MMIC VCO with integrated resonator, negative resistance device, varactor diode, and buffer amplifi er. Covering 7.8 to 8.7 GHz, the VCO’s phase noise performance is excellent over temperature, shock and vibration due to the oscillator’s monolithic structure. Power output is +14 dBm typical from a single supply of +3.0V @ 77 mA. The voltage controlled oscillator is packaged in a leadless QFN 4 x 4 mm surface mount package.

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