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HMC536MS8G的技术资料

来源:东莞市盈鑫光电有限公司; (2009/4/21 20:02:04)
HMC536MS8G的产品特征:
.Input P0.1dB: +34 dBm @ +5V
.Insertion Loss: 0.5 dB
.Positive Control: +3V or +5V2
.MS8G SMT Package, 14.8 mm
.Isolation: 27 dB
.Very Fast Switching Speed


HMC536MS8G的技术参数:

Control Voltage Range

-0.5 to +7.5 Vdc

Hot Switch Power Level
(Vctl = +3V)

+29 dBm

Channel Temperature

150 °C

Continuous Pdiss (T = 85 °C)
(derate 9.5 mW/°C above 85 °C)

0.55 W

Thermal Resistance

105 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

ESD Sensitivity (HBM)

Class 1A



HMC536MS8G的产品描述:

The HMC536MS8G is a DC to 6 GHz GaAs MMIC T/R switch in an 8 lead MSOP8G surface mount package with an exposed ground paddle. The switch is ideal for cellular/PCS/3G basestation  applications featuring low 0.5 dB insertion loss and +55 dBm input IP3.  Power handling is excellent up through 6 GHz with the switch offering a P0.1dB compression point of +29 dBm at +3 volts control. On-chip circuitry allows positive voltage control of 0/+3 volts or 0/+5 volts at very low DC currents.

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