HMC536MS8G的技术资料
.Input P0.1dB: +34 dBm @ +5V
.Insertion Loss: 0.5 dB
.Positive Control: +3V or +5V2
.MS8G SMT Package, 14.8 mm
.Isolation: 27 dB
.Very Fast Switching Speed
HMC536MS8G的技术参数:
Control Voltage Range |
-0.5 to +7.5 Vdc |
Hot Switch Power Level |
+29 dBm |
Channel Temperature |
150 °C |
Continuous Pdiss (T = 85 °C) |
0.55 W |
Thermal Resistance |
105 °C/W |
Storage Temperature |
-65 to +150 °C |
Operating Temperature |
-40 to +85 °C |
ESD Sensitivity (HBM) |
Class 1A |
HMC536MS8G的产品描述:
The HMC536MS8G is a DC to 6 GHz GaAs MMIC T/R switch in an 8 lead MSOP8G surface mount package with an exposed ground paddle. The switch is ideal for cellular/PCS/3G basestation applications featuring low 0.5 dB insertion loss and +55 dBm input IP3. Power handling is excellent up through 6 GHz with the switch offering a P0.1dB compression point of +29 dBm at +3 volts control. On-chip circuitry allows positive voltage control of 0/+3 volts or 0/+5 volts at very low DC currents.
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