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HMC546MS8G的技术资料

来源:东莞市盈鑫光电有限公司; (2009/4/21 20:02:04)
HMC546MS8G的产品特征:
. High Input P0.1 dB:  +40 dBm Tx
. Low Insertion Loss:  0.4 dB
. High IIP3: +65 dBm
. Positive Control:  0/+3V to 0/+8V


HMC546MS8G的技术参数:

 

3V

5V

Max. Input Power

Tx Port
Rx Port

40 dBm
24 dBm

40 dBm
29 dBm

Max Channel Temp.

 

150 °C

150 °C

Thermal Resistance

Tx Port
Rx Port

54 °C/W
68 °C/W

54 °C/W
86 °C/W

Continuous Dissipated
Power

Tx Port
Rx Port

1.12 W
73 mW

1.12 W
232 mW

Supply Voltage (Vdd)

+10 Vdc

Control Voltage Range (Vctl)

-0.2 to Vdd + 1.0 Vdc

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

ESD Sensitivity (HBM)

Class 1A



HMC546MS8G的产品描述:

The HMC546MS8G & HMC546MS8GE are low-cost SPDT switches in 8-lead MSOP8G surface mount packages for use in transmit-receive applications which require very low distortion at high signal power levels, up to 10 watts. The device can control signals from 200 - 2200 MHz* and is especially suited for cellular booster, PMR and automotive telematic applications.  The design provides exceptional P0.1 dB of +40 dBm and +65 dBm IIP3 on the Transmit (Tx) port. On-chip circuitry allows single positive supply operation at very low DC current with a single contro input.

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